MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To obtain a fuse having microstructure by forming a first conductive layer as the end section of the fuse first, applying a thin second conductive layer on the whole surface containing the first conductive layer and forming a desired shape through etching when the fuse is shaped to the surface of a semiconductor substrate through an insulating layer. CONSTITUTION:An insulating layer 2 in 0.7mum thickness is formed on the surface of a semiconductor substrate 1 through a normal pressure CVD method, and first conductive layers 3 consisting of an Al-Si alloy in wide width as both end sections of a fuse are applied on the insulating layer 2 through sputtering. A second conductive layer 5 composed of the same alloy is applied on the whole surface containing these conductive layers 3 while thickness is brought to 500Angstrom through the same method, and coated with a positive type resist film 6 with a predetermined shape, and minimum width of the second conductive layer 5 positioned between the first conductive layers 3 is brought to 4.0mum and length is also brought to 4.0mum through reactive ion etching having anisotropy. Accordingly, a fuse easily melting at 100-150mA is obtained with excellent reproducibility.