MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To contrive to curtail the process index, and to enhance the number of lots to be processed at manufacture of semiconductor devices by a method wherein after a semiconductor substrate applied with a resist is prebaked, the above-mentioned resist is cooled rapidly to enhance sensitivity of th...

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Bibliographische Detailangaben
Hauptverfasser:	SAITOU KAZUYUKI, KATOU CHIHARU
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To contrive to curtail the process index, and to enhance the number of lots to be processed at manufacture of semiconductor devices by a method wherein after a semiconductor substrate applied with a resist is prebaked, the above-mentioned resist is cooled rapidly to enhance sensitivity of the positive type resist. CONSTITUTION:After a resist is applied on a semiconductor substrate 10 consisting of a semiconductor substrate 11 and an oxide film 12 formed on the semiconductor substrate 11 thereof, prebaking is performed, and the semiconductor substrate 10 is cooled rapidly from the back according to dry ice or nitrogen liquid. Then a photo mask formed by carving a chrome pattern is put on a photo resist 13, and ultraviolet rays or far-ultraviolet rays are projected from the upper part of the photo mask thereof to perform exposure. After then, when development is performed to remove the photo resist 13 selectively, the pattern is formed as shown in the figure (b). Then, after post-baking is performed, the oxide film 12 is etched selectively using the photo resist 13 as a mask. After then, the photo resist 13 is exfoliated to be removed, and the pattern of the oxide film 12 as shown in the figure (d) is obtained.