SPUTTERING DEVICE

PURPOSE:To form easily a thin alloy film having an optional compsn. ratio by combining a target cover having an aperture and a rotatable shutter and changing an aperture area. CONSTITUTION:An aperture is formed at the center on the top surface of a target cover 12 and a shutter 14 having a semicircu...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	TANAKA KUNIO, IKEDA TANEJIROU
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PURPOSE:To form easily a thin alloy film having an optional compsn. ratio by combining a target cover having an aperture and a rotatable shutter and changing an aperture area. CONSTITUTION:An aperture is formed at the center on the top surface of a target cover 12 and a shutter 14 having a semicircular shape, etc. rotating around a shaft 13 is provided. When the shutter 14 is rotated in the stage of sputtering, the aperture area of the cover 12 changes and the area ratio of the ion sputtering region incident to targets 11a, 11b, i.e., the evaporation ratio of molecules changes. The compsn. ratio of the deposited film changes accordingly. The thin film controlled to a desired compsn. ratio of Ni, Cr, etc. by such mechanism is formed on a substrate 10. When the rotating angle of the shutter 14 is changed during sputtering, the thin alloy film having the compsn. changing in the film thickness direction is formed.