MANUFACTURE OF BUMP ELECTRODE TYPE SEMICONDUCTOR DEVICE

PURPOSE:To form a bump electrode having high reliability by forming the pump electrode consisting of a low melting-point metal on laminated metallic films composed of Ti/Al/Ti while using the laminated metallic films as foundation metallic films and removing the laminated metallic films through etching by using an alkali group etchant. CONSTITUTION:An insulating film 23 with openings is formed on input sections 22 consisting of Al electrodes on a CCD substrate 21. A laminated film 24 in which a Ti film 241, an Al film 242 and a Ti film 243 are evaporated on the whole surface in succession is shaped. Cu films 25 as plating layers are formed at positions where bump electrodes are shaped through evaporation and patterning. A photo-resist 26 is formed according to a pattern, and Cu layers 27 and In layers 28 are shaped. The photo-resist 26 is removed, only foundation metallic layers just under laminated electrodes consisting of the Cu layers 27 and the In layers 28 are left while using the laminated electrodes as masks, and the laminated metallic films 24 except these layers 27, layers 28 and foundation metallic layers are removed gradually through etching by an alkali group etchant in succession.