MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To prevent the damage of the base non single crystal semiconductor containing amorphous silicon by a method wherein a photo transmitting conductive film of sublimation and a metallic conductor excellent in conductivity and a heat-resistant insulation film excellent in heat retaining property thereon are formed. CONSTITUTION:An amorphous semiconductor is formed on a metallic substrate 1 by plasma vapor phase reaction. This semiconductor 4 consists of an I-type amorphous semiconductor 2 and an N type microcrystallized semiconductor 3. The photo transmitting conductive film 5 is formed thereon by the electron beam evaporation method, and further the metallic conductor 6 is evaporated by the electron beam evaporation method. Moreover, an Si nitride film 12, an insulation film, is formed thereon by the reaction of SiH4 or Si2H6 with NH3 by increasing the substrate temperature. The metallic conductor is irradiated with a laser beam, and thus an open groove 10 or an aperture is formed by removing residuals in the region to be irradiated and in its neighborhood.