METHOD AND DEVICE FOR PRODUCING COMPOUND SINGLE CRYSTAL WITH HIGH DISSOCIATION PRESSURE

PURPOSE:To suppress thermal decomposition on the surface of III-V group compd. single crystal and to prevent generation of a defect in a process for producing said single crystal by a melt-pulling up method by maintaining the vapor atmosphere of a volatile element (V group element) in the sealing sp...

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Hauptverfasser:	KASHIYANAGI YUUZOU, OZAWA SHIYOUICHI, AZUMA KATSUMI, KIJIMA TAKASHI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PURPOSE:To suppress thermal decomposition on the surface of III-V group compd. single crystal and to prevent generation of a defect in a process for producing said single crystal by a melt-pulling up method by maintaining the vapor atmosphere of a volatile element (V group element) in the sealing space above the liquid sealing bath of a crucible. CONSTITUTION:A quartz cover 14 provided with a tubular opening 15 at the top is fitted to the crucible 3 in a pressure vessel 1 and the inside of the vessel 1 is maintained under 3-60atm, by an inert gas. The upper part of the cover 14 is heated to 400-700 deg.C by auxiliary heaters 4a, 4b and the crucible 3 is heated by the heater 4 to melt the raw material charged preliminarily therein and to form a gallium aresenide melt 9 and a liquid sealing bath 10 consisting of boron oxide. The sealing space in the cover 14 is maintained in the arsenic vapor atmosphere under 7Torr-4atm. partial pressure. While the temp. gradient in the bath 10 is kept at