METHOD AND DEVICE FOR PRODUCING COMPOUND SINGLE CRYSTAL WITH HIGH DISSOCIATION PRESSURE

PURPOSE:To suppress thermal decomposition on the surface of a III-V group compd. single crystal and to prevent generation of a defect in production of said single crystal by a melt-pulling up method by maintaining the vapor atmosphere of a volatile element (V group element) in the sealing space abov...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KASHIYANAGI YUUZOU, OZAWA SHIYOUICHI, AZUMA KATSUMI, KIJIMA TAKASHI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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