METHOD AND DEVICE FOR PRODUCING COMPOUND SINGLE CRYSTAL WITH HIGH DISSOCIATION PRESSURE

PURPOSE:To suppress thermal decomposition on the surface of a III-V group compd. single crystal and to prevent generation of a defect in production of said single crystal by a melt-pulling up method by maintaining the vapor atmosphere of a volatile element (V group element) in the sealing space abov...

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Hauptverfasser:	KASHIYANAGI YUUZOU, OZAWA SHIYOUICHI, AZUMA KATSUMI, KIJIMA TAKASHI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PURPOSE:To suppress thermal decomposition on the surface of a III-V group compd. single crystal and to prevent generation of a defect in production of said single crystal by a melt-pulling up method by maintaining the vapor atmosphere of a volatile element (V group element) in the sealing space above the liquid sealing bath of a crucible. CONSTITUTION:A quartz cover 16 provided with a sealing tray 14d via a tubular part 15 at the top is fitted to the crucible 3 in a pressure vessel 1 and the inside of the vessel 1 is held at 2-60atm by an inert gas. The crucible 3 is heated by a heater 4 to melt the material charged preliminarily therein to form a gallium arsenide melt 9 and a liquid sealing bath 10 consisting of boron oxide. On the other hand, the upper part of the cover 16 and the tray 14 are heated to 400- 700 deg.C by auxiliary heaters 4a, 4b to form a liquid sealing bath 20 and at the same time the arsenic vapor atmosphere of 7Torr-4atm partial pressure is maintained in the sealing space in the cover 16. While the temp. gradient in the bath 10 is kept at