MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To make it possible to form a groove without damaging a semiconductor by forming a conductive film of a light transmission conductive film and a sublimed metal film on the semiconductor, and selectively laser-machining the film. CONSTITUTION:An I-type amorphous semiconductor 2 and an N type ultrafine crystallized semiconductor 3 are formed on a substrate 1 of glass, single crystal semiconductor, organic resin or stainless steel as a nonsingle crystal semiconductor 4. Further, a light transmission conductive film 5 which mainly contains indium oxide is formed on the upper surface, and a metal conductor 6 which mainly contains chromium is formed on the upper surface. A YAG laser is emitted to the workpiece thus formed to form grooves 7 on the films 5, 6, and the conductor is separated from the regions 11, 12. At this time, the residue 13 remains in the groove 7, the ends 9, 9' of chromium are formed to be flared up, and separated from the substrate. Further, the entire substrate is dipped in a cleanser, cleaned with supersonic wave to remove the residue 13, the floated portions 9, 9' of the end of the chromium are removed by supersonic energy.