LASER WORKING METHOD OF FILM ON ORGANIC RESIN

PURPOSE:To remove selectively a light transmittable conductive film and a non- single crystal semiconductor and to form channels or openings by forming said conductive film and semiconductor on a thin org. resin film and irradiating pulse laser light thereto. CONSTITUTION:A light transmittable condu...

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Bibliographische Detailangaben
Hauptverfasser:	YAMAZAKI SHIYUNPEI, WATABE SATSUKI, ITOU KENJI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING CUTTING-OUT DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING HAND CUTTING TOOLS MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PERFORATING PERFORMING OPERATIONS PHYSICS PUNCHING SEMICONDUCTOR DEVICES SEVERING SEVERING BY MEANS OTHER THAN CUTTING SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR SHAPING OR JOINING OF PLASTICS SOLDERING OR UNSOLDERING STAMPING-OUT TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF TRANSPORTING WELDING WORKING BY LASER BEAM WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
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Beschreibung
Zusammenfassung:	PURPOSE:To remove selectively a light transmittable conductive film and a non- single crystal semiconductor and to form channels or openings by forming said conductive film and semiconductor on a thin org. resin film and irradiating pulse laser light thereto. CONSTITUTION:A light transmittable conductive film 2 consisting principally of indium oxide or tin oxide is formed by a sputtering method on a thin org. resin film 1 having an insulating surface and 180 deg.C upper limit temp. for continuous use. A non-single crystal semiconductor 22 consisting principally of silicon is laminated by a plasma vapor phase method atop said film. A YAG laser is then repeatedly and simultaneously irradiated at 6kHz, 1.3W average output, 100 nsec-1musec pulse width and 120cm/min scanning speed. Channels 10, 10' are then obtd. and no damage and partial deterioration are generated at all on the surface of the resin 1.