MASK ALIGNMENT EMPLOYING SPECIAL REFERENCE MARK

PURPOSE:To obtain a reference mark for mask alignment which minimizes the time required for pre-exposure, by employing a pattern formed by arranging sets of a multiplicity of small patterns. CONSTITUTION:A reference mark 5 for mask alignment is constituted by a pattern formed by arranging at a spaci...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser:	NISHIZUKA HIROSHI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To obtain a reference mark for mask alignment which minimizes the time required for pre-exposure, by employing a pattern formed by arranging sets of a multiplicity of small patterns. CONSTITUTION:A reference mark 5 for mask alignment is constituted by a pattern formed by arranging at a spacing of 2mum squares 6 each having a side which is, for example, 5mum long. The reference mark 5 is only required to have dimensions such as those described above by which it is possible to obtain a detected signal level similar to that obtained by a conventional reference mark 4 for mask alignment. The reference mark 5 is constituted by a pattern formed by arranging spaced minute square marks 6 (square emulsion thin films, or square thin films which prevent any exposure irradiation ray from passing therethrough, such as chromium thin films, formed on the glass substrate surface).