SEMICONDUCTOR LASER ELEMENT AND MANUFACTURE THEREOF

PURPOSE:To flatten the upper surface of an element preventing a crack due to stepped element from occuring in case of mounting the element by a method wherein any step between the upper surface of the top semiconductor layer on an active layer of a semiconductor layer element with BH structure and the upper surface of both side buried layers is minimized. CONSTITUTION:An N type InP clad layer 4 containing Te, an InGaAsP active layer 5, a P type InP clad layer 6 containing Zn are successively formed on an N type InP substrate 2. After forming a band-like mask 15 in parallel on the upper surface of a wafer 14, a groove 16 is formed by successively etching a semiconductor layer exposed from the mask 15. The groove 16 is buried in a heat and chemical resistant insulator 17 for which polyimide base resin is suitable. When the surface of an anode electrode 11 is fixed on a submount, the thrust for a chip 1 in case of fixing may be exerted evenly for the overall surface of the chip 1 preventing a chip crack due to a step from occuring to improve the yield of chip bonding since the chip 1 formed in this way may be made almost flush with the upper surface of a cap layer 7 and the insulator 17 to flatten the upper surface of the anode electrode 11.