MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To reduce sheet resistance of a polycrystalline silicon film by a method wherein after the prescribed pattern is formed by etching selectively the polycrystalline silicon film doped with impurities, a temperature-resistant insulating film is rotatingly applied to the whole region of the surface of a semiconductor substrate, and a high temperature heat treatment is applied for a short time. CONSTITUTION:Think SiO2 films 2 are formed selectively on a silicon substrate 1, and a thin gate oxide film 3 is formed on another part. A polycrystalline silicon film 4 is grown on the silicon substrate thereof using the decompression CVD method. Then, the polycrystalline silicon film 4 is etched selectively according to the photoetching method to form a polycrystalline silicon gate electrode 41 and a polycrystalline silicon wiring layer 42. Then after a temperature-resistant insulating film 6 is formed on the whole region of the surface of the silicon substrate according to the rotational application method, the heat treatment is applied for the short time of about 10-30sec in the high temperature of the degree of 1,000-1,200 deg.C according to the infrared radiation heating method. Phosphorus ions implanted in the polycrystalline silicon are activated according to the heat treatment thereof, and the resistance value of the polycrystalline silicon is reduced.