FORMATION OF NIOBIUM PATTERN

PURPOSE:To make dimensional accuracy and reproducibility of a pattern excellent even by using a fluoric acid series etchant by a method wherein a material having excellent etching resistace to the fluoric acid series etchant is thinly laid under an Nb film, and thus pattern formation is performed. C...

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Bibliographische Detailangaben
Hauptverfasser:	TARUYA YOSHINOBU, YAMADA KOUJI, NISHINO JIYUICHI
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
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Beschreibung
Zusammenfassung:	PURPOSE:To make dimensional accuracy and reproducibility of a pattern excellent even by using a fluoric acid series etchant by a method wherein a material having excellent etching resistace to the fluoric acid series etchant is thinly laid under an Nb film, and thus pattern formation is performed. CONSTITUTION:A thermal oxide film SiO2 2 is formed on a substrate 1, a Cr film is adhered thereon to 30nm, and successively the Nb film is adhered to 300nm. A photo resist is coated thereon, and thus prebake treatment is performed. Next, exposure of a desired pattern is performed, and then drying is performed after development and washing in water. Then, after post bake treatment, oxygen plasma light asher is performed, and treatment is performed with the etchant of e.g. fluoric acid: nitric acid: water=1:2:7. Successively, the etching of the Cr is performed by using ammonium ceric nitrate. After washing in water, spin drying is performed, and an electrode pattern 3 is obtained.