SEMICONDUCTOR SUBSTRATE PROCESSING EQUIPMENT

PURPOSE:To clean a reaction tube for processing a semiconductor substrate under ordinary operating condition by adding a cleaning gas flowing equipment which flows a cleaning gas into the tube intermittently to the side of a gas introducing inlet provided to one end of the reaction tube. CONSTITUTIO...

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Hauptverfasser:	YONEDA TADANAKA, HIRAI YOSHIHIKO, HAGIO MASAMITSU, NISHIKAWA ATSUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY CLEANING CLEANING IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PREVENTION OF FOULING IN GENERAL SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Beschreibung
Zusammenfassung:	PURPOSE:To clean a reaction tube for processing a semiconductor substrate under ordinary operating condition by adding a cleaning gas flowing equipment which flows a cleaning gas into the tube intermittently to the side of a gas introducing inlet provided to one end of the reaction tube. CONSTITUTION:A three-directional valve 11 is added to the part of the connection between a gas introducing inlet of a quartz reaction tube 3 and a reaction gas control equipment 4 and a cleaning gas flowing equipment 12 is connected to it. With this configuration, a large quantity of high pressure inert gas 13 for cleaning the reaction tube 3 is flown in a moment only into the reaction tube 3 through the equipment 12 by operating the valve 11 to blow up foreign substances 6 such as quartz powder existing in the tube 3 by a turbulent flow 14 and gradually exhausted out of the tube 3 by an exhaustion equipment 15. After the inside of the tube 3 is cleaned completely, the three-directional valve 11 is turned and a reaction gas from the control equipment 4 is introduced into the tube 3.