METHOD AND APPARATUS FOR EXPOSURE

PURPOSE:To secure highly accurate position alignment, by removing only the resist which is applied to a target pattern part before the alignment work. CONSTITUTION:An exposure light beam 24 is transmitted through an optical fiber 16 and projected on a resist 9 on a target pattern 7 through a lens 17...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	KADOTA KAZUYA, NAGAO MAKI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To secure highly accurate position alignment, by removing only the resist which is applied to a target pattern part before the alignment work. CONSTITUTION:An exposure light beam 24 is transmitted through an optical fiber 16 and projected on a resist 9 on a target pattern 7 through a lens 17. The resist 9 at said part is exposed. Then a developing liquid is supplied to the resist 9 through an inner tube 15 from a developing liquid supply source 18. Thereafter, a rinsing liquid is supplied through the inner tube 15 from a rinsing liquid supply source 19, and the developed part surrounded by an outer tube 11 on a wafer 6 is washed. The resist 9 at the part corresponding to the target pattern 7 is removed. A local resist removing device 10 is lifted. Then an aligning light beam is projected on the exposed part of the target pattern 7. By detecting the reflected light from the pattern part, optical fine alignment is performed, and the positioning of the wafer 6 and a reticle 3 is performed.