METHOD FOR LIQUID-PHASE EPITAXIAL GROWTH

PURPOSE:To grow an InP layer without generation of a meltback as well as to form an excellent hetero-junction interface between said InP layer and an InGaAs layer by a method wherein the InGaAs layer is grown on an InP substrate at the specific growth termination temperature, and the InP layer grown at the specific cooling speed in such a manner that it comes in contact with the InGaAs layer. CONSTITUTION:The InP substrate 1, having the raw material of solution of the prescribed composition ratio and the surface 111A as a main surface, is placed in a sliding boat, and it is maintained at an approximate temperature of 630 deg.C for approximtely one hour. Subsequenty, using the temperature program having a growth termination temperature of 580 deg.C or below, the meltback of the InP substrate 1 and the growth of the first InP layer 2, an InGaAs layer 3 and the second InP layer 4 are performed successively while said InP substrate 1 is being cooled when the fixed cooling speed alpha is 2 deg.C/min or above, namely. alpha=2.5 deg.C/min for example. The lattice dismatching of DELTAa/a with the InGaAs layer 3, the InGaAs layers 2 and 3 in room temperature of the semiconductor substrate formed through the above procedures is brought to -0.03%, for example, which is within the tolerance limit.