SEMICONDUCTOR LIGHT EMITTING DEVICE

PURPOSE:To obtain the two-color light emitting device of a low forward directional voltage by a method whrein a p type and an n type epitaxial layers are laminatedly grow to construct a first color light emitting semiconductor layer, a second color light emitting semiconductor layer constructed by laminating an n type layer and a p type layer is formed thereon interposing an n type layer between them, and a cathode electrode and an anode electrode are provided respctively to the prescribed layers. CONSTITUTION:The p type GaP layer 12 made carrier concentration thereof to 2-3X10 /cm by doping with Zn and O is grow liquid phase epitaixally on the p type GaP substrate 11 doped with Zn, and moreover the n type GaP layer 13 made concentration thereof to 1-2X10 /cm is grown thereon to construct the red color light emitting semiconductor layer L1. Then the n type GaP layer 20 doped with Te is grown on the whole surface, and the n type GaP layer 14 doped with N and the p type GaP layer 15 doped with N and Zn are laminated thereon to construct the green color light emitting semiconductor layer L2. After then, about a half of the layer L2 is removed, a common electrode K is provided on the exposed layer 20, and the electrodes A2, A1 are fixed respectively on the layer 15 and to the back of the substrate 11.