SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

An intermediate, lattice accommodating epitaxial layer (4) of GaAlAs is positioned between a monocrystalline substrate (2), eg of Al2O3, and a device layer (6) of semiconductor material (eg of GaAs) in which semiconductor devices can be formed. A thin layer (5) of Ge may be included between the subs...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ROBAATO ROOZENBAAGU, HARORUDO JIYON HOBURU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An intermediate, lattice accommodating epitaxial layer (4) of GaAlAs is positioned between a monocrystalline substrate (2), eg of Al2O3, and a device layer (6) of semiconductor material (eg of GaAs) in which semiconductor devices can be formed. A thin layer (5) of Ge may be included between the substrate (2) and the GaAlAs layer (4) to permit a wider lattice spacing tolerance for the substrate (2).