LIGHT-RECEIVING ELEMENT

PURPOSE:To widen the dynamic range of the light-receiving element by a method wherein the dark current, running into the capacitance in a pixel, is reduced by providing a blocking layer of N- or P-conductive type, or a blocking layer of insulating oxide film between the capacitor and an electrode. C...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	UMAJI TOORU, YAMAMOTO HIDEAKI, TSUKADA TOSHIHISA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To widen the dynamic range of the light-receiving element by a method wherein the dark current, running into the capacitance in a pixel, is reduced by providing a blocking layer of N- or P-conductive type, or a blocking layer of insulating oxide film between the capacitor and an electrode. CONSTITUTION:In order to pick-up signal charge from a contact point in proportion to luminous energy, a photo diode 8 having rectifying property and light sensitivity, and a capacitor 18 which will be used to block the flow of electric charge are provided. Using an amorphous Sipin hydride junction 20 as a photo diode 8 and an i-type amorphous Si hydride 19 as a capacitor 18, a unit picture element can be manufactured by performing only one process. Partaining to the material for the diode and the capacitor, amorphous SiC hydride, amorphous SiGe hydride, or laser-annealed polycrystalline Si formed by performing a CVD method and the like, laser-annealed polycrystalline Si and the like may be used besides the material above-mentioned.