JPS5934296B

A resist material used for forming a positive image by application of radiation, said material comprising as principal constituent poly(ethyl alpha -cyanoacrylate), poly(ethyl alpha -amidoacrylate) or a binary copolymer thereof or a ternary copolymer of poly(ethyl alpha -cyanoacrylate), poly(ethyl a...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	TSUCHA SOJI, MATSUDA SHUNSUKE, NAGAMATSU GENTARO, PPONMA MASAMI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS PRINTED CIRCUITS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A resist material used for forming a positive image by application of radiation, said material comprising as principal constituent poly(ethyl alpha -cyanoacrylate), poly(ethyl alpha -amidoacrylate) or a binary copolymer thereof or a ternary copolymer of poly(ethyl alpha -cyanoacrylate), poly(ethyl alpha -amidoacrylate) and polymethacrylonitrile. The minimum incident charge of radiation required for forming a desired resist pattern by use of this resist material is as low as 10-7 coulomb/cm2, or far lower than the level required in use of other known resist materials, and a positive resist image which can well stand the chromium etching solutions is obtained by short-time irradiation.