SEMICONDUCTOR PRESSURE SENSOR

PURPOSE:To improve reliability, by controlling a junction current and specifying the thickness of a junction layer formed between a thick part and a base by an anode junction method. CONSTITUTION:A gauge chip 1 and a glass die 2 are stacked and put in a chamber 3 while fixed by a jig, and the chamber 3 is put in an electric furnace and heated up to 300-350 deg.C; and an 800-1,500V high DC voltage is impressed while the gauge chip 1 is held positive and the glass die 2 is held negative. Then, NaO which is the alkali component of the glass die 2 is polarized, and oxygen ions are emitted from the junction boundary surface of the glass die 2 and migrate to the side of the gauge chip 1. Further, the Si of the gauge chip 1 is also ionized into Si, which migrates to the side of the glass die 2 to form the junction layer of SiO2 at the junction boundary part by the ion diffusion of them, thereby jointing the gauge chip 1 and glass die 2 together by the layer. In this case, the thickness of this layer is specified to 3-6mum.