SEMICONDUCTOR LIGHT-EMITTING DEVICE
PURPOSE:To enable a light source of an excellent optical quenching ratio by forming a laser-beam extracting port to a slender shape in the vertical direction to a joining surface. CONSTITUTION:When the laser-beam extracting port 9 is formed to the slender shape in the vertical direction to the joini...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | PURPOSE:To enable a light source of an excellent optical quenching ratio by forming a laser-beam extracting port to a slender shape in the vertical direction to a joining surface. CONSTITUTION:When the laser-beam extracting port 9 is formed to the slender shape in the vertical direction to the joining surface 4a of a semiconductor laser element 4 in the semiconductor light-emitting device, light-emitting components are passed sufficiently, and natural light-emitting components can be interrupted approximately. Accordingly, Pf0/Pb is increased, and the light source of the excellent optical quenching ratio is obtained. |
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