LIQUID PHASE EPITAXIAL GROWING METHOD

PURPOSE:To avoid bumps produced by an edge growth and facilitate uniform coating of a resist film of a required thickness on a surface of an LPE layer easily by a method wherein edge growth preventing crystal substrates which prevent an edge growth are provided to circumference parts of a crystal substrate for an LPE layer growth and an LPE layer growth solution gets contact with main surfaces of both substrates. CONSTITUTION:End surfaces of edge growth preventing crystal substrates 11 get contact with end surfaces of a circumference of an LPE layer growth crystal substrate 1 and a solution 4 gets contact with the main surfaces of the substrate 1 and the substrates 11. Because the main surfaces of the substrate 1 and the substrates 11 are almost continuous as a crystal growing surface, parts 4a of the solution 4, which contribute to the LPE layer growth from outside of the main surface of the substrate 1, do not exist on the circumference parts of the substrate 1 but are pushed outside the substrates 11. Therefore, an edge growth is completely eliminated from the substrate 1 so that the bumped thick parts are eliminated from the circumference of the LPE layer 15 formed on the main surface of the substrate 1 and the layer thickness of the LPE layer 15 can be uniform all over the main surface of the substrate 1.