MANUFACTURE OF LIQUID-CRYSTAL DISPLAY PANEL

PURPOSE:To increase the opening rate of a liquid-crystal display panel by providing a reflecting electrode to be connected electrically to a thin-film transistor (TR) formed by a three-layer continuous forming method on a protection film formed on the thin-film TR only from a hole for connection wit...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	KAWAI SATORU, KODAMA TOSHIROU, YANAI KENICHI, NASU YASUHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PURPOSE:To increase the opening rate of a liquid-crystal display panel by providing a reflecting electrode to be connected electrically to a thin-film transistor (TR) formed by a three-layer continuous forming method on a protection film formed on the thin-film TR only from a hole for connection with the source electrode of the protection film. CONSTITUTION:A zigzag gate electrode 2 is formed on a glass substrate 1. Then, a gate insulating film 3, a-Si film 4 as an active film, channel protection film 5, and a-Si film 6 for reinforcing resist contacting are formed successively thereupon. Resist is applied and then the back surface of the glass substrate 1 is exposed to form a lift-off pattern 7 for the formation of a source and a drain electrode by using the gate electrode 2 as a mask. Then, the substrate is etched so that the protection film 5 and a-Si film 6 are left on a channel, and an NiCr layer 8 having na-Si as an ohmic layer is vapor-deposited and lifted off to form a source electrode 9 and a drain electrode 10. The TR protection film 11 and a window 11a for reflecting electrode connection are formed, an aluminum reflecting electrode 12 is formed, and the drain and gate electrodes are led out to complete the constitution.