SEMICONDUCTOR LIGHT-EMITTING DEVICE

PURPOSE:To change an oscillation mode into longitudinal multiple modes, and to flatten the temperature characteristics of noises by inclining the axial direction of the strapping of an active layer in a refractive-index waveguide type semiconductor laser device at a fixed angle from a normal line of a reflection plane. CONSTITUTION:An n type Ga0.5Al0.5As layer 2, a p type Ga0.5Al0.5As layer 3 and an n type GaAs layer 4 are grown to an n type GaAs substrate 1 in an epitaxial manner. A striped groove 1A reaching the substrate 1 is formed through a photoetching method, the direction of the groove 1A is directed in the direction of an angle theta formed together with the normal line to the reflection plane 9, and theta is made approximately 5 deg.. Only the p type Ga0.5Al0.5As layer 3 is etched selectively by using a fluoric acid group etching liquid to form a recessed section 3A. An n type Ga1-xAlxAs clad layer 5 is formed through a liquid growth method. The clad layer 5 can be formed in the groove 1A lower than the recessed section 3A with excellent reproducibility by the presence of the recessed section 3A at that time. A p type or n type Ga1-kAlkAs active layer 6 is formed continuously. A p type Ga1-gAlgAs clad layer 7 and a p type GaAs cap layer 8 are formed through a liquid growth method.