SIC SINGLE CRYSTAL LAMINATE AND MANUFACTURE THEREOF

PURPOSE:To improve crystallizability of a 3C-SiC single crystal to the degree applicable for an illuminant element by a method wherein the single crystal is constructed of a 6H-SiC single crystal, a carbide layer formed on the surface of the said single crystal, and a 3C-SiC single crystal laminated on the said carbide layer. CONSTITUTION:A substrate 11 is held at 1800 deg.C, and C3H8 gas, SiH4 gas, and H2 gas are sent respectively into a reaction chamber 1 from a first-third inlet tubes 3-5, and by holding the substrate in the reaction chamber for about 1hr, a 6H-SiC single crystal layer 12 is grown on the surface of the substrate 11. Then, when only Ar gas is sent in the reaction chamber 1 from a gas inlet tube 2, and held for about 30min making the temperature of the substrate to 1800 deg.C, Si atoms are sublimated from the surface of the 6H-SiC single crystal layer 12 to form a carbide layer 13. Then, when the temperature of the substrate is held to 1450 deg.C, and C3H8 gas, SiH4 gas and H2 gas are sent respectively in the reaction chamber 1 from the first-third inlet tubes 3-5 to be held for about 2hr, a 3C- SiC single crystal layer 14 is grown on the carbide layer 13. At the vapor phase growth process, the temperature of the substrate is made to 1350-1550 deg.C.