ELECTRODE FORMATION OF SIC

PURPOSE:To obtain an electrode with excellent ohmic chracteristics by a method wherein after a silicon layer and an aluminum layer are formed on a P type SiC, the heat treatment is performed. CONSTITUTION:An aluminum layer and a silicon layer are successively formed on a P type SiC in such a manner...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	SANO JIYUNICHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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