ELECTRODE FORMATION OF SIC

PURPOSE:To obtain an electrode with excellent ohmic chracteristics by a method wherein after a silicon layer and an aluminum layer are formed on a P type SiC, the heat treatment is performed. CONSTITUTION:An aluminum layer and a silicon layer are successively formed on a P type SiC in such a manner that the ratio of composing aluminum atoms and silicon atoms is 89:11. Then the heat treatment is performed at 950 deg.C under the vacuum degree of less than 10Torr for 5min. From the viewpoint of degree of alloy and contact resistance between the P type SiC and the electrode material, the ratio of composing atoms of silicon is preferably within the range of 7-70% and, as the heat-treatment conditions, the temprature of higher than 950 deg.C and the period of longer than 5min are recommended.