FIELD EFFECT TRANSISTOR AMPLIFIER

PURPOSE:To constitute a titled amplifier so that no chip of a waveform is generated by a low Miller effect even if it is used in a wide band and by a high output, by regulating a signal inputted to the base of a driving transistor to a shape conforming with a frequency characteristic of input impeda...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: OOSAWA MICHITAKA
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PURPOSE:To constitute a titled amplifier so that no chip of a waveform is generated by a low Miller effect even if it is used in a wide band and by a high output, by regulating a signal inputted to the base of a driving transistor to a shape conforming with a frequency characteristic of input impedance of an FET, and thereafter, inputting it to the FET. CONSTITUTION:An input signal supplied from an input signal source is divided into two in a point (a) of the base side of a driving transistor 2, and one of them is supplied as a base current of the transistor 2. The other is supplied to a filter circuit 7, in which it is regulated to a shape conforming with a frequency characteristic of input impedance of an FET1. Subsequently, an output signal of the filter circuit 7 is supplied to a non-inverted type amplifier 6 whose output impedance is small, and also an output of the amplifier is supplied to a gate terminal of the FET1 through a bias voltage source 3.