MANUFACTURE OF MASK FOR X-RAY LITHOGRAPHY

PURPOSE:To obtain a self-support type mask for X-ray lithography at low cost by forming an X-ray absorbing composite material film prepared by dispersing microparticles of a metal of a high atomic number into a polyimide binder, patterning it, and further forming a polyimide layer. CONSTITUTION:A hard layer 4 of an X-ray absorbing composite material is formed by dispersing microparticles of a high atomic number, such as gold, into a polyimide precursor soln. and baking it. An electron beam resist layer 6 is formed on the layer 4, and it is patternwise exposed to electron beams 7 and developed with H2 plasma 8 to form a resist relief pattern 6'. The pattern 6' is transferred onto the film 4 by reactive ion beam etching 9, and then an intended mask is obtained by forming a polyimide layer 11 and removing the film 4 from a temporary substrate 5.