MANUFACTURE OF MASK FOR X-RAY LITHOGRAPHY

PURPOSE:To obtain a mask for X-ray lithography at low cost by using an X-ray absorbing composite material prepared by dispersing microparticles of a metal of a high atomic number into a polymer binder material for an X-ray absorbing material in place of a bulk of gold. CONSTITUTION:A layer 2 of an X...

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1. Verfasser: HATSUTORI SHIYUUZOU
Format: Patent
Sprache:eng
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Zusammenfassung:PURPOSE:To obtain a mask for X-ray lithography at low cost by using an X-ray absorbing composite material prepared by dispersing microparticles of a metal of a high atomic number into a polymer binder material for an X-ray absorbing material in place of a bulk of gold. CONSTITUTION:A layer 2 of an X-ray absorbing composite material contg. microparticles of a high atomic number, such as fine gold particles, is formed on a substrate 1 by the plasma deposition method of metal evaporation and dispersion, and electron beam resist layers 3, 4 are successively formed on the layer 2 by the plasma deposition method. The layers 3, 4 are patternwise exposed to electron beams 5 and developed by the dry method to form a resist relief pattern. An intended mask for X-ray lithography is obtained by transferring said pattern thus obtained onto the layer 2 of the X-ray absorbing composite material by the reactive ion etching method 8.