JOSEPHSON READ ONLY MEMORY

PURPOSE:To make uniform the inductance and static capacitance of each bit line, to stabilize the operation at readout and to attain the storage with high density, by arranging a magnetic flux detector at all storage locations and making the number of Josephson junction elements included in each bit line equal with its connection. CONSTITUTION:The magnetic flux generated from a word line 105 is impressed to a magnetic flux detector 104 comprising one Josephson junction element in a memory cell storing ''1'', and in flowing a current to the word line 105, a voltage is generated between superconduction electrodes 101 and 103. The magnetic flux generated on the word line 105 is not given to the magnetic flux detector 104 in the memory cell storing ''0'' because the word line 105 is formed aside the magnetic flux detector 104, and no voltage is generated. Four word lines 402 and four bit lines 401 are given to a circuit constituting a memory array of 4-row and 4-column and the magnetic flux detector 403 is connected in series to be a part of the bit line. One of four bit lines and the four word lines is selected and the information is read out as the presence/absence of a voltage at one end of the bit line 401 by flowing a current to the line.