SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

PURPOSE:To prevent the obstruction of external magnetic field and noise by alleviating the influence on electric performance between each circuit block in the titled device by a method wherein the element region and the wiring layer for constituting a circuit are coated with a magnetic shielding conductive layer via insulation layer. CONSTITUTION:The element 23 are isolated by a P type element isolation region 22 on a P type substrate 21 of the titled device of bi-polar type. This isolation region 22 is composed of a diffused layer having the same impurity as in the substrate 21, the element 23 are constituted in an N type epitaxial layer 29, and the substrate 21 and the isolation region 22 are put at the same potential. Next, the first insulation layer 24 and the wiring layer 25 for constituting the circuit are formed, and the second insulation layer 26 is attached on the wiring layer 25. Then, the part of an element isolation region contact 28 is opened, and said part 28 and the elements 23 and the wiring layer 25 via the insulation layer 26 are coated with the magnetic shielding wiring layer 27. Thus, the influence on electric performance between each block in the device is alleviated, and the obstruction of external magnetic field and external noise is prevented.