PATTERN FORMING DEVICE IN CONTINUOUS THIN FILM FORMING DEVICE
PURPOSE:To provide a titled device which enables continuous formation of a thin film having a distinct horizontal stripe pattern by providing a mask of a magnetic material along the film forming surface of a belt-like material, providing a magnet on the rear of the belt-like material and attracting...
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| creator | SUWA HIDENORI |
| description | PURPOSE:To provide a titled device which enables continuous formation of a thin film having a distinct horizontal stripe pattern by providing a mask of a magnetic material along the film forming surface of a belt-like material, providing a magnet on the rear of the belt-like material and attracting the mask to the belt-like material in tight contact therewith. CONSTITUTION:A mask 5 of a magnetic material provided with through-holes 4 for forming a pattern is provided freely travelably together with a belt-like material 3 in order to form the stripe pattern in the horizontal direction of the material 3 on the thin film forming surface 3a of the material 3 in a vacuum chamber 2. A magnet 6 such as an electromagnet or the like is provided on the rear of the material 3 and the mask 5 is brought into tight contact with the surface 3a of the material 3 by the effect of magnetic lines 6a. The horizontal sripe pattern of the thin film formed continuously on the material 3 is made distinct by such device. Since an electrode pattern, etc. are simultaneously formed in the stage of forming the film, the post treatment stage such as etching is omitted. |
| format | Patent |
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CONSTITUTION:A mask 5 of a magnetic material provided with through-holes 4 for forming a pattern is provided freely travelably together with a belt-like material 3 in order to form the stripe pattern in the horizontal direction of the material 3 on the thin film forming surface 3a of the material 3 in a vacuum chamber 2. A magnet 6 such as an electromagnet or the like is provided on the rear of the material 3 and the mask 5 is brought into tight contact with the surface 3a of the material 3 by the effect of magnetic lines 6a. The horizontal sripe pattern of the thin film formed continuously on the material 3 is made distinct by such device. Since an electrode pattern, etc. are simultaneously formed in the stage of forming the film, the post treatment stage such as etching is omitted.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>1984</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19841012&DB=EPODOC&CC=JP&NR=S59179777A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19841012&DB=EPODOC&CC=JP&NR=S59179777A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SUWA HIDENORI</creatorcontrib><title>PATTERN FORMING DEVICE IN CONTINUOUS THIN FILM FORMING DEVICE</title><description>PURPOSE:To provide a titled device which enables continuous formation of a thin film having a distinct horizontal stripe pattern by providing a mask of a magnetic material along the film forming surface of a belt-like material, providing a magnet on the rear of the belt-like material and attracting the mask to the belt-like material in tight contact therewith. CONSTITUTION:A mask 5 of a magnetic material provided with through-holes 4 for forming a pattern is provided freely travelably together with a belt-like material 3 in order to form the stripe pattern in the horizontal direction of the material 3 on the thin film forming surface 3a of the material 3 in a vacuum chamber 2. A magnet 6 such as an electromagnet or the like is provided on the rear of the material 3 and the mask 5 is brought into tight contact with the surface 3a of the material 3 by the effect of magnetic lines 6a. The horizontal sripe pattern of the thin film formed continuously on the material 3 is made distinct by such device. Since an electrode pattern, etc. are simultaneously formed in the stage of forming the film, the post treatment stage such as etching is omitted.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1984</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLANcAwJcQ3yU3DzD_L19HNXcHEN83R2VfD0U3D29wvx9Av1Dw1WCPEA8t08fXzRlPEwsKYl5hSn8kJpbgZFN9cQZw_d1IL8-NTigsTk1LzUknivgGBTS0NzS3Nzc0djYtQAAD4FKk8</recordid><startdate>19841012</startdate><enddate>19841012</enddate><creator>SUWA HIDENORI</creator><scope>EVB</scope></search><sort><creationdate>19841012</creationdate><title>PATTERN FORMING DEVICE IN CONTINUOUS THIN FILM FORMING DEVICE</title><author>SUWA HIDENORI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPS59179777A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1984</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>SUWA HIDENORI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SUWA HIDENORI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PATTERN FORMING DEVICE IN CONTINUOUS THIN FILM FORMING DEVICE</title><date>1984-10-12</date><risdate>1984</risdate><abstract>PURPOSE:To provide a titled device which enables continuous formation of a thin film having a distinct horizontal stripe pattern by providing a mask of a magnetic material along the film forming surface of a belt-like material, providing a magnet on the rear of the belt-like material and attracting the mask to the belt-like material in tight contact therewith. CONSTITUTION:A mask 5 of a magnetic material provided with through-holes 4 for forming a pattern is provided freely travelably together with a belt-like material 3 in order to form the stripe pattern in the horizontal direction of the material 3 on the thin film forming surface 3a of the material 3 in a vacuum chamber 2. A magnet 6 such as an electromagnet or the like is provided on the rear of the material 3 and the mask 5 is brought into tight contact with the surface 3a of the material 3 by the effect of magnetic lines 6a. The horizontal sripe pattern of the thin film formed continuously on the material 3 is made distinct by such device. Since an electrode pattern, etc. are simultaneously formed in the stage of forming the film, the post treatment stage such as etching is omitted.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | PATTERN FORMING DEVICE IN CONTINUOUS THIN FILM FORMING DEVICE |
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