TRAPPING APPARATUS
PURPOSE:To trap accurately by providing the first, the second trapping surfaces and a radiant heat preventing means to a trap for treating waste gas from a plasmic treatment apparatus to prevent the surface diffusion of the gas to be treated. CONSTITUTION:The gas to be treated is introduced from a s...
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| creator | OOTSUBO TOORU |
| description | PURPOSE:To trap accurately by providing the first, the second trapping surfaces and a radiant heat preventing means to a trap for treating waste gas from a plasmic treatment apparatus to prevent the surface diffusion of the gas to be treated. CONSTITUTION:The gas to be treated is introduced from a suction port 14, and brought into contact with the first trapping surface 13a. Then the treated gas, which is not collected, is a trapped on the second trapping surface 15a. Liquid nitrogen is stored in a vessel 13 as a refrigerant. A shielding plate 16 is provided below the second trapping surface to prevent the incidence of the radiant heat from a trapping apparatus 12 to the second trapping surface. |
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CONSTITUTION:The gas to be treated is introduced from a suction port 14, and brought into contact with the first trapping surface 13a. Then the treated gas, which is not collected, is a trapped on the second trapping surface 15a. Liquid nitrogen is stored in a vessel 13 as a refrigerant. A shielding plate 16 is provided below the second trapping surface to prevent the incidence of the radiant heat from a trapping apparatus 12 to the second trapping surface.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; PERFORMING OPERATIONS ; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL ; SEMICONDUCTOR DEVICES ; SEPARATION ; TRANSPORTING</subject><creationdate>1984</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19841011&DB=EPODOC&CC=JP&NR=S59179101A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19841011&DB=EPODOC&CC=JP&NR=S59179101A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OOTSUBO TOORU</creatorcontrib><title>TRAPPING APPARATUS</title><description>PURPOSE:To trap accurately by providing the first, the second trapping surfaces and a radiant heat preventing means to a trap for treating waste gas from a plasmic treatment apparatus to prevent the surface diffusion of the gas to be treated. 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A shielding plate 16 is provided below the second trapping surface to prevent the incidence of the radiant heat from a trapping apparatus 12 to the second trapping surface.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>PERFORMING OPERATIONS</subject><subject>PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SEPARATION</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1984</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAKCXIMCPD0c1cAUo5BjiGhwTwMrGmJOcWpvFCam0HRzTXE2UM3tSA_PrW4IDE5NS-1JN4rINjU0tDc0tDA0NGYGDUAVVIeiQ</recordid><startdate>19841011</startdate><enddate>19841011</enddate><creator>OOTSUBO TOORU</creator><scope>EVB</scope></search><sort><creationdate>19841011</creationdate><title>TRAPPING APPARATUS</title><author>OOTSUBO TOORU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPS59179101A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1984</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>PERFORMING OPERATIONS</topic><topic>PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SEPARATION</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>OOTSUBO TOORU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OOTSUBO TOORU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>TRAPPING APPARATUS</title><date>1984-10-11</date><risdate>1984</risdate><abstract>PURPOSE:To trap accurately by providing the first, the second trapping surfaces and a radiant heat preventing means to a trap for treating waste gas from a plasmic treatment apparatus to prevent the surface diffusion of the gas to be treated. CONSTITUTION:The gas to be treated is introduced from a suction port 14, and brought into contact with the first trapping surface 13a. Then the treated gas, which is not collected, is a trapped on the second trapping surface 15a. Liquid nitrogen is stored in a vessel 13 as a refrigerant. A shielding plate 16 is provided below the second trapping surface to prevent the incidence of the radiant heat from a trapping apparatus 12 to the second trapping surface.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL SEMICONDUCTOR DEVICES SEPARATION TRANSPORTING |
| title | TRAPPING APPARATUS |
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