SOLID-STATE IMAGE PICKUP ELEMENT

PURPOSE:To restrain the generation of noise charge and restrain the flow of the noise charge to a charge transfer part to improve S/N, by providing a photodetecting part and the charge transfer part to a position having a low lattice defect density and introducing impurities to a part around them to raise the defect density. CONSTITUTION:A semiconductor substrate 1' obtained by forming a no-defect layer 11 on an internal defect layer 12 is used, and oxygen ion is charged to the no-defect layer 11 of the substrate 1' in the position around an image pickup function part consisting of a photodetecting part A, gate electrodes C and C, and charge transfer parts B and B having transfered electrodes (b) and (b). By this method, the lattice defect density of this position is raised to the same as the lattice defect density of the internal defect layer 12. Thus, the generation of the noise charge and the flowing of the noise charge to charge transfer parts B and B are suppressed considerably, and consequently, a high S/N and high- quality picture signal is obtained.