MANUFACTURE OF ELEMENT

PURPOSE:To form easily and moreover surely a metal thin film for an electrode, etc. on the peripheral part of the internal surface of a fine hole by a method wherein an electrically conductive material arranged at the bottom part of the fine hole is sputtered by irradiation of ion beams. CONSTITUTION:A metal 12 is adhered to the surface of a substrate 11 having a deep hole 11a according to the vacuum evaporation method. Owing to the directional property of vacuum evaporation, the metal is not adhered to the internal side of the deep hole 11a. When ions of argon, etc. are projected at the vertical direction to sputter the metal 12, the metal 12 is removed from the surface of the substrate 11 and the bottom of the deep hole 11a, and the metal can be adhered to the internal side of the deep hole 11a. Because the sputtering method is used, the kind of the metal is not limited, and a metal of high reliability such as platinum, molybdenum, etc. can be used in addition to gold.