MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To contrive to make exposure sufficient enough in a short time and to avoid the remarkable decrease of resolution even in plasma irradiation by using polymethyl isopropenyl ketone positive type resist as the lower layer resist in a multi-layer resist technique. CONSTITUTION:A substrate 1 is spin-coated with the PMIPK as the lower layer resist 2. After baking, it s spin-coated with positive type resist as the upper layer resist 3 and baking is performed. After a pattern is exposed on the upper layer resist 3 with near ultraviolet rays by means of a projection type exposure machine using a mask 4, it is developed, dried, and cleaned thus forming a pattern apertures 5. After far ultraviolet ray exposure is performed to the lower layer resist 2 by means of a proximity type exposure machine, the treatment before development to enhance the fusion property of the contact surface between both the resist layers is performed by irradiating the boundary surface between said layers 3 and 2 with O2 plasma. An aperture of a diameter larger than that of said aperture 5 can be formed by development in such a way that said aperture 5 of said layer 3 become an overhang.