SCHOTTKY-BARRIER-GATE TYPE FIELD-EFFECT TRANSISTOR

PURPOSE:To reduce parasitic resistance between a source and a drain by forming a gate electrode so that one part covers an inclined plane on the source side in a recessed section and separating the gate electrode from an inclined plane on the drain side. CONSTITUTION:An N-GaAs layer 12 as an active layer is formed on a GaAs base body 11. A source electrode 13 and a drain electrode 14 are formed on the layer 12 in an ohmic manner. A recessed section 15 forming recess structure is shaped by arrangement held by these electrodes 13 and 14. A gate electrode 16 for forming a Schottky-barrier is shaped in the recessed section 15. The electrode 16 is formed in arrangement in which at least one part covers an inclined plane 15b. The electrode 16 is separated from an inclined plane 15c on the electrode 14 side. According to such constitution, the value of parasitic resistance between a source and a gate can be inhibited to an extremely small value, and the characteristics of a proper FET can be obtained as the parasitic resistance is left as it is reduced.