SILANE HAVING SIC-BONDED SUCCINIC ANHYDRIDE AND MANUFACTURE

Silanes containing an SiC bound succinic anhydride group are prepared by reaction of a succinic anhydride derivative of the general formula in which m is 2 or 3, with a silane of the general formula HSiRnX3-n in which R denotes identical or different, monovalent, SiC bound organic radicals, X denote...

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Hauptverfasser: RUDORUFU RIITORE, NORUBERUTO TSUERAA, PEETAA YOON, TATSUSHIRO RINTONAA
Format: Patent
Sprache:eng
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Zusammenfassung:Silanes containing an SiC bound succinic anhydride group are prepared by reaction of a succinic anhydride derivative of the general formula in which m is 2 or 3, with a silane of the general formula HSiRnX3-n in which R denotes identical or different, monovalent, SiC bound organic radicals, X denotes identical or different alkoxy or alkoxyalkyleneoxy radicals and n is 0, 1 or 2, in the presence of a catalyst promoting the addition of Si-bound hydrogen to an aliphatic multiple bond. Silanes of the general formula in which R, X and n have the meaning indicated for these above, are new.