MULTI-STAGE DARLINGTON CONNECTION TRANSISTOR

PURPOSE:To increase the dielectric strength of multi-stage Darlington connection transistors (TRs) provided additionally with a speed-up diode by providing a larger emitter surrounding length to the TR of the final stage in comparison with the TR of the next stage. CONSTITUTION:In the Darlington TRs...

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1. Verfasser: SEKIYA TSUNETO
Format: Patent
Sprache:eng
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Zusammenfassung:PURPOSE:To increase the dielectric strength of multi-stage Darlington connection transistors (TRs) provided additionally with a speed-up diode by providing a larger emitter surrounding length to the TR of the final stage in comparison with the TR of the next stage. CONSTITUTION:In the Darlington TRs of three-stage connection formed in one chip, the area of a part 11 of a TR1 has an area intermediate between that of a part 12 of a TR2 and that of a part 13 of a TR3. Thus, the surrounding length of the emitter of the TR1 is longer than that of the TR2 and the dielectric strength is increased accordingly.