PHOTODETECTOR INTEGRATED WITH OPTICAL WAVE GUIDE

PHOTODETECTOR INTEGRATED WITH OPTICAL WAVE GUIDE

PURPOSE:To reduce optical loss improving the efficiency of incident light by a method wherein a part of light receiving element is located in an optical wave guide. CONSTITUTION:In case of forming a light receiving element, after forming an etching mask 11 on a top N type InP clad layer 4, a window...

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BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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description PURPOSE:To reduce optical loss improving the efficiency of incident light by a method wherein a part of light receiving element is located in an optical wave guide. CONSTITUTION:In case of forming a light receiving element, after forming an etching mask 11 on a top N type InP clad layer 4, a window is opened to form a V channel 12 reaching a clad layer 4, an optical wave guide 3, a buffer layer 2 and a substrate 1. Firstly after removing a mask 11, a P type In1-x3Gax3Asy3P1-y3 layer 13 and an N type In1-x3Gax3Asy3P1-y3 layer 14 are epitaxially grown so that a part of said layers are located in the V channel. However in this case the relation of E3
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CONSTITUTION:In case of forming a light receiving element, after forming an etching mask 11 on a top N type InP clad layer 4, a window is opened to form a V channel 12 reaching a clad layer 4, an optical wave guide 3, a buffer layer 2 and a substrate 1. Firstly after removing a mask 11, a P type In1-x3Gax3Asy3P1-y3 layer 13 and an N type In1-x3Gax3Asy3P1-y3 layer 14 are epitaxially grown so that a part of said layers are located in the V channel. However in this case the relation of E3&lt;=E2&lt;E1 shall be satisfied between the band gap E3 of In1-x3Gax3 P1-y3 layer 14, the band gap E1 of the optical wave guide 3 (In1-x1Gax1Asy1P1-y1) and the band gap E2 of the active layer 5 (In1-x2Gax2Asy2P1-y2) of the light emitting element. 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CONSTITUTION:In case of forming a light receiving element, after forming an etching mask 11 on a top N type InP clad layer 4, a window is opened to form a V channel 12 reaching a clad layer 4, an optical wave guide 3, a buffer layer 2 and a substrate 1. Firstly after removing a mask 11, a P type In1-x3Gax3Asy3P1-y3 layer 13 and an N type In1-x3Gax3Asy3P1-y3 layer 14 are epitaxially grown so that a part of said layers are located in the V channel. However in this case the relation of E3&lt;=E2&lt;E1 shall be satisfied between the band gap E3 of In1-x3Gax3 P1-y3 layer 14, the band gap E1 of the optical wave guide 3 (In1-x1Gax1Asy1P1-y1) and the band gap E2 of the active layer 5 (In1-x2Gax2Asy2P1-y2) of the light emitting element. 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CONSTITUTION:In case of forming a light receiving element, after forming an etching mask 11 on a top N type InP clad layer 4, a window is opened to form a V channel 12 reaching a clad layer 4, an optical wave guide 3, a buffer layer 2 and a substrate 1. Firstly after removing a mask 11, a P type In1-x3Gax3Asy3P1-y3 layer 13 and an N type In1-x3Gax3Asy3P1-y3 layer 14 are epitaxially grown so that a part of said layers are located in the V channel. However in this case the relation of E3&lt;=E2&lt;E1 shall be satisfied between the band gap E3 of In1-x3Gax3 P1-y3 layer 14, the band gap E1 of the optical wave guide 3 (In1-x1Gax1Asy1P1-y1) and the band gap E2 of the active layer 5 (In1-x2Gax2Asy2P1-y2) of the light emitting element. Thirdly after removing unnecessary parts of the layers 13, 14 by etching using proper mask, electrodes 15, 16 are formed by evaporation respectively on the layers 13, 14.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title PHOTODETECTOR INTEGRATED WITH OPTICAL WAVE GUIDE
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