PHOTODETECTOR INTEGRATED WITH OPTICAL WAVE GUIDE

PHOTODETECTOR INTEGRATED WITH OPTICAL WAVE GUIDE

PURPOSE:To reduce optical loss improving the efficiency of incident light by a method wherein a part of light receiving element is located in an optical wave guide. CONSTITUTION:In case of forming a light receiving element, after forming an etching mask 11 on a top N type InP clad layer 4, a window...

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Bibliographische Detailangaben
1. Verfasser: HASE NOBUYASU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PURPOSE:To reduce optical loss improving the efficiency of incident light by a method wherein a part of light receiving element is located in an optical wave guide. CONSTITUTION:In case of forming a light receiving element, after forming an etching mask 11 on a top N type InP clad layer 4, a window is opened to form a V channel 12 reaching a clad layer 4, an optical wave guide 3, a buffer layer 2 and a substrate 1. Firstly after removing a mask 11, a P type In1-x3Gax3Asy3P1-y3 layer 13 and an N type In1-x3Gax3Asy3P1-y3 layer 14 are epitaxially grown so that a part of said layers are located in the V channel. However in this case the relation of E3