SEMICONDUCTOR DEVICE

PURPOSE:To shorten the manufacturing procedure of a semiconductor device, wherein a mask ROM and a PROM are provided on the same substrate, by providing similar structures for the mask ROM and the PROM. CONSTITUTION:A plurality of stripe shaped second conductive type regions 3 are arranged on a first conductive type substrate 1. An island shaped first conductive type region 4 is provided in the second conductive type region 3. On the island shaped first conductive type region 4, an insulating film 6 having electrode contact windows 5 and 5' and a plurality of metal film wirings 7, which are aligned in the direction crossing the stripe shaped second conductive region 3, are provided. Information is fixed in a mask ROM by whether insulating films 8 are provided in the electrode contact windows 5 and 5' or not. Information is written in a PROM by shorting insulating layers 10 provided on the upper surface of first conductive type polycrystal silicon layers 9, which are provided in the electrode contact windows 5 and 5'.