SEMICONDUCTOR DEVICE

PURPOSE:To heighten the protective effect for surface stabilization against an aluminum wiring layer by forming a composite film out of a silicate glass film being strong mechanically and a silicon nitride film being strong against chemical pollution. CONSTITUTION:An insulating film 2 formed on the main surface of a semiconductor substrate 1 has an opening formed on a predetermined position on it and is coated aluminum including said opening. Further on the semiconductor substrate on which the aluminum is removed selectively to form an aluminum wiring layer 3, a silicon nitride film 5 is produced by chemical gas phase growth with low temperature, that is one under the melting point of the aluminum wiring layer 3. Next, a phosphorus silicate glass film 4 is produced on the silicon nitride film 5 similarly with low temperature which is under the melting point of the aluminum wiring layer 3. For reactive gas and carrier gas used in the production process, NH3:SiH4 for the former and PH3:SiH4 for the latter are available respectively.