FORMATION OF SOLDER ELECTRODE OF SOLAR BATTERY ELEMENT

PURPOSE:To obtain a solder electrode without warps or deformations by a method wherein as Si wafer is held between plates at a fixed temperature and pressed, after providing a noble metallic film on the wafer, covering it with solder by superposing resist layers at fixed intervals, and then removing...

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Bibliographische Detailangaben
Hauptverfasser:	SHIMA KAZUYOSHI, IWAGAMI MASAKAZU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To obtain a solder electrode without warps or deformations by a method wherein as Si wafer is held between plates at a fixed temperature and pressed, after providing a noble metallic film on the wafer, covering it with solder by superposing resist layers at fixed intervals, and then removing the resists. CONSTITUTION:A Ti-Pd-Ag layer 12 is evaporated on one surface of the clean and thin Si wafer 11, the stripe resits 13 are provided, and the wafer is dipped in a fused solder bath. The solder electrodes 14 of widths W 2-5mm. and intervals S 0.5-1mm. approx. are provided by removing the resists. Successively, the wafer 11 is held between the plates at 150-180 deg.C and then treated for about 5min at approx. 200-500g/cm . This constitution enables to accurately form the solder electrodes 14 in parallel with the gaps 15 without warps in the wafer.