TESTING METHOD OF SEMICONDUCTOR DEVICE
PURPOSE:To accelerate and evaluate the moisture resistance characteristics of a resin-sealed semiconductor device by placing the resin-sealed semiconductor device in a high-temperature, high-humidity atmosphere of pressure higher than atmospheric pressure for a desired time and then impressing a vol...
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creator | SHIRAGASAWA TSUYOSHI NOYORI MASAHARU |
description | PURPOSE:To accelerate and evaluate the moisture resistance characteristics of a resin-sealed semiconductor device by placing the resin-sealed semiconductor device in a high-temperature, high-humidity atmosphere of pressure higher than atmospheric pressure for a desired time and then impressing a voltage in the atmosphere. CONSTITUTION:The resin-sealed semiconductor device, e.g. LSI is left in the high-temperature, high-humidity atmosphere. Representative conditions are 121 deg.C, 100% RH, and a 48hr conserving time, which are the same with a pressure cooker test (PCT). Then, a voltage impression test is taken at 150 deg.C ambient temperature after this conservation test. Humidification is unnecessary in the atmosphere of the voltage impression test and a normal drying furnace is usable. Consequently, moisture resistance is evaluated in an extremely short time and only the conservation test is taken on conventional pressure cooker conditions, so the tests are performed efficiently and economically. |
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CONSTITUTION:The resin-sealed semiconductor device, e.g. LSI is left in the high-temperature, high-humidity atmosphere. Representative conditions are 121 deg.C, 100% RH, and a 48hr conserving time, which are the same with a pressure cooker test (PCT). Then, a voltage impression test is taken at 150 deg.C ambient temperature after this conservation test. Humidification is unnecessary in the atmosphere of the voltage impression test and a normal drying furnace is usable. 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CONSTITUTION:The resin-sealed semiconductor device, e.g. LSI is left in the high-temperature, high-humidity atmosphere. Representative conditions are 121 deg.C, 100% RH, and a 48hr conserving time, which are the same with a pressure cooker test (PCT). Then, a voltage impression test is taken at 150 deg.C ambient temperature after this conservation test. Humidification is unnecessary in the atmosphere of the voltage impression test and a normal drying furnace is usable. 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CONSTITUTION:The resin-sealed semiconductor device, e.g. LSI is left in the high-temperature, high-humidity atmosphere. Representative conditions are 121 deg.C, 100% RH, and a 48hr conserving time, which are the same with a pressure cooker test (PCT). Then, a voltage impression test is taken at 150 deg.C ambient temperature after this conservation test. Humidification is unnecessary in the atmosphere of the voltage impression test and a normal drying furnace is usable. Consequently, moisture resistance is evaluated in an extremely short time and only the conservation test is taken on conventional pressure cooker conditions, so the tests are performed efficiently and economically.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SEMICONDUCTOR DEVICES TESTING |
title | TESTING METHOD OF SEMICONDUCTOR DEVICE |
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