TESTING METHOD OF SEMICONDUCTOR DEVICE

PURPOSE:To accelerate and evaluate the moisture resistance characteristics of a resin-sealed semiconductor device by placing the resin-sealed semiconductor device in a high-temperature, high-humidity atmosphere of pressure higher than atmospheric pressure for a desired time and then impressing a vol...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: SHIRAGASAWA TSUYOSHI, NOYORI MASAHARU
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PURPOSE:To accelerate and evaluate the moisture resistance characteristics of a resin-sealed semiconductor device by placing the resin-sealed semiconductor device in a high-temperature, high-humidity atmosphere of pressure higher than atmospheric pressure for a desired time and then impressing a voltage in the atmosphere. CONSTITUTION:The resin-sealed semiconductor device, e.g. LSI is left in the high-temperature, high-humidity atmosphere. Representative conditions are 121 deg.C, 100% RH, and a 48hr conserving time, which are the same with a pressure cooker test (PCT). Then, a voltage impression test is taken at 150 deg.C ambient temperature after this conservation test. Humidification is unnecessary in the atmosphere of the voltage impression test and a normal drying furnace is usable. Consequently, moisture resistance is evaluated in an extremely short time and only the conservation test is taken on conventional pressure cooker conditions, so the tests are performed efficiently and economically.