PLASMA CVD APPARATUS

PURPOSE:To prevent the contamination of an anode electrode and the inside of a vacuum processing reservoir and enhance the quality of a film formed on a substrate by arranging a substrate carrying tray having the structure that a pair of opposing flat plates are supported by an insulating material between the opposing electrodes. CONSTITUTION:A tray 6 is carried into a vacuum processing reservoir 1 and it is supported between the cathode electrode 4a and the anode electrode 4b so that the surface of anode electrode 4b is perfectly covered by such tray and simultaneously a partitioning plate 12 is closed. Next, a high frequency electrical field is formed between a flat plate 7 in the side of cathod electrode and a flat plate 8 in the side of anode electrode by applying the predetermined high frequency voltage across the cathode electrode 4a and the anode electrode 4b, a reaction gas is sequetially supplied into the vacuum processing reservoir 1 while the adjusting valve 3a is controlled and an amorphous silicon film is deposited at the upper surface of substrate 10 arranged on the flat plate 8 in the side of anode electrode of the tray 6 through decomposition of the SiH4 gas with a high frequency electrical field. On the other hand, residual deposited material which does not contribute to formation on the surface of substrate 10 is adhered to the area on the flat plate 8 in the side of anode electrode where substrates 10 are not arranged or to the cathode electrode.